Enhanced resistance of single-layer graphene to ion bombardment

We report that single-layer graphene on a SiO(2)/Si substrate withstands ion bombardment up to similar to 7 times longer than expected when exposed to focused Ga(+) ion beam. The exposure is performed in a dual beam scanning electron microscope/focused ion beam system at 30 kV accelerating voltage and 41 pA current. Ga(+) ion flux is determined by sputtering a known volume of hydrogenated amorphous carbon film deposited via plasma-enhanced chemical vapor deposition. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428466]