Journal
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3475356
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Funding
- Swedish Research Council
- Swedish Foundation for Strategic Research
- VINNOVA
- EU [015783]
- Knut and Alice Wallenberg Foundation
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Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2 X 10(18) to 1 X 10(19) cm(-3), while the surface charge density exceeds 5 X 10(12) cm(-2) and is shown to increase with higher dopant precursor molar fraction. (C) 2010 American Institute of Physics. [doi:10.1063/1.3475356]
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