Journal
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3511697
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Funding
- Ministry of Knowledge Economy (MKE) [2008-F052-01]
- Regional Innovation Center for Industrialization of Advanced Chemical Materials [TIC04-05-42]
- Ministry of Education, Science and Technology [2010-0023180]
- Korea Evaluation Institute of Industrial Technology (KEIT) [KI001909] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Korea Institute of Industrial Technology(KITECH) [B0000165] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-0023180] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report on low-voltage-operated polymer transistors with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/poly(methyl methacrylate) (PMMA) blended films as a gate dielectric layer. Top-gate polymer transistors are fabricated by all-solution processes on poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) as an active layer. Both the operating voltage and charge carrier mobility are improved using P(VDF-TrFE)/PMMA blended films as a dielectric layer and by optimization of the ratio of the composite. F8T2 transistors have a high field-effect mobility of 1 x 10(-2) cm(2)/V s and a low operation gate voltage of less than 10 V. The operation voltage effectively decreases owing to the high permittivity of the P(VDF-TrFE)]/(PMMA) blended film (10.4-8.4). The hysteresis induced by the ferroelectric polymer effectively disappears with the addition of a small amount of amorphous PMMA (5 wt%). (C) 2010 American Institute of Physics. [doi:10.1063/1.3511697]
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