Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3176903
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Funding
- Inc. Administrative Agency New Energy and Industrial Technology Development Organization (NEDO)
- Ministry of Economy, Trade and Industry (METI), Japan
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We have fabricated and compared the performance of GaAs-based p-i-n quantum dot solar cells with ten multilayer stacked structures of self-assembled InAs quantum dots embedded with GaNxAs1-x strain-compensating spacer layers. Reducing the thickness of the spacer layer, and hence increasing the nitrogen composition in GaNxAs1-x, from 40 nm (x = 0.5%) to 15 nm (x = 1.5%) thereby fulfilling the net strain-balanced condition, resulted in a steady increase in the short-circuit density, while a decreasing trend for the open-circuit voltage was observed. The observed results can be interpreted in terms of the difference in the quantum confinement structure. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3176903]
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