Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3191175
Keywords
carrier density; carrier mobility; gallium compounds; Hall effect; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photodiodes; semiconductor superlattices
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Funding
- French DGA
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In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.
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