Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3226073
Keywords
-
Categories
Funding
- Capes
- Renami
- CNPq
- Fapesp
Ask authors/readers for more resources
In order to explain the higher short-circuit current (J(sc)) with comparable open-circuit voltage (V-oc) from dye-sensitized solar cells (DSCs) based on gallium-modified ZnO (ZnO:Ga) porous electrodes, the diffusion coefficient (D) and electron lifetime (tau) in DSCs with and without Ga-modified ZnO were studied by stepped light-induced transient measurements of photocurrent and voltage. In comparison to DSCs based on ZnO electrodes, the ZnO:Ga-based solar cells provided lower D and higher tau values. The results were interpreted according to the transport-limited recombination model, where the Ga modification induced a higher density of intraband charge traps. At matched electron densities, a decrease in V-oc from DSCs based on ZnO:Ga was observed, suggesting a positive shift of the ZnO:Ga conduction band edge. The higher J(sc) can be explained by the positive shift of the ZnO:Ga conduction band edge in addition to the increased roughness factor of the electrode due to the Ga modification. (C) 2009 American Institute of Physics. [doi:10.1063/1.3226073]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available