Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 5, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3082494
Keywords
epitaxial growth; gallium arsenide; III-V semiconductors; indium compounds; nanolithography; photoluminescence; semiconductor growth; semiconductor quantum dots
Categories
Funding
- GE/Lockheed Martin Shared Vision
Ask authors/readers for more resources
We report on selective area growth of InAs and GaAs quantum dots (QDs) on GaAs through similar to 20 nm SiO2 windows prepared by block copolymer lithography. We discuss the mechanisms of growth through these masks, highlighting the variation of the resulting morphology (dot size, spacing, uniformity, and areal density) as a function of growth parameters. We have obtained highly uniform arrays of InAs and GaAs QDs with mean diameters and areal densities of 20.6 nm and 1x10(11) cm(-2), respectively. We have also investigated the optical characteristics of these QDs as a function of temperature and drawn correlations between the optical response and their crystalline quality.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available