Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3108543
Keywords
annealing; carrier density; carrier mobility; diffusion; electrical conductivity; electrical resistivity; hydrogen; II-VI semiconductors; impurity states; interstitials; light transmission; plasma materials processing; semiconductor thin films; sputter deposition; vacancies (crystal); visible spectra; wide band gap semiconductors; zinc compounds
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Funding
- 863 project of China [2006AA03Z306]
- National Natural Science Foundation of China [50601025, 60876031]
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We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films deposited by radio frequency magnetron sputtering. It is found that the ZnO:H film is highly transparent with the average transmittance of 92% in the visible range. Both carrier concentration and mobility are increased after hydrogen plasma treatment, correspondingly, the resistivity of the ZnO:H films achieves the order of 10(-3) cm. We suggest that the incorporated hydrogen not only passivates most of the defects and/or acceptors present, but also introduces shallow donor states such as the V-O-H complex and the interstitial hydrogen H-i. Moreover, the annealing data indicate that H-i is unstable in ZnO, while the V-O-H complex remains stable on the whole at 400 degrees C, and the latter diffuses out when the annealing temperature increases to 500 degrees C. These results make ZnO:H more attractive for future applications as transparent conducting electrodes.
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