4.6 Article

Temperature dependence of piezoelectric properties of high-TC Bi(Mg1/2Ti1/2)O3-PbTiO3

Journal

JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 3, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3191666

Keywords

bismuth compounds; dielectric hysteresis; dielectric polarisation; electric domains; ferroelectric switching; ferroelectric transitions; lead compounds; piezoelectric materials; space groups; X-ray diffraction

Funding

  1. Alexander von Humboldt foundation

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The temperature dependence of both polarization and electric-field induced strain was investigated for (1-x)Bi(Mg1/2Ti1/2)O-3-xPbTiO(3) (x=0.36, 0.37, and 0.38), with the morphotropic phase boundary located at x=0.37. Remanent polarization (P-r) and maximum polarization (P-max) of all compositions are enhanced with increasing temperature up to 175 degrees C, which is rationalized as improved domain switching due to reduced tetragonality (c/a). The hysteresis during unipolar electric cycling tends to decrease with increase in the fraction of tetragonal phase. Temperature dependent x-ray diffraction demonstrates that switched non-180 degrees domains are stable against thermal depoling above 200 degrees C, which indicates that the currently investigated materials are suitable for high temperature applications. This promising high-T-C piezoelectric is further discussed with reference to oxygen octahedron of the tilted R3c and untilted R3m space groups and the tolerance factor (t).

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