Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3148275
Keywords
desorption; gallium compounds; III-V semiconductors; molecular beam epitaxial growth; reaction kinetics; reflection high energy electron diffraction; wide band gap semiconductors
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An in-depth model for the transient behavior of metal atoms adsorbed on the surface of GaN is developed. This model is developed by qualitatively analyzing transient reflection high energy electron diffraction (RHEED) signals, which were recorded for a variety of growth conditions of GaN grown by molecular-beam epitaxy (MBE) using metal-modulated epitaxy (MME). Details such as the initial desorption of a nitrogen adlayer and the formation of the Ga monolayer, bilayer, and droplets are monitored using RHEED and related to Ga flux and shutter cycles. The suggested model increases the understanding of the surface kinetics of GaN, provides an indirect method of monitoring the kinetic evolution of these surfaces, and introduces a novel method of in situ growth rate determination.
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