Related references
Note: Only part of the references are listed.Vacancy-mediated dopant diffusion activation enthalpies for germanium
A. Chroneos et al.
APPLIED PHYSICS LETTERS (2008)
Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion
Miki Naganawa et al.
APPLIED PHYSICS LETTERS (2008)
Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss
N. Ioannou et al.
APPLIED PHYSICS LETTERS (2008)
The vacancy in silicon: A critical evaluation of experimental and theoretical results
Hartmut Bracht et al.
JOURNAL OF APPLIED PHYSICS (2008)
Engineering the free vacancy and active donor concentrations in phosphorus and arsenic double donor-doped germanium
A. Chroneos et al.
JOURNAL OF APPLIED PHYSICS (2008)
Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
Sergej Brotzmann et al.
JOURNAL OF APPLIED PHYSICS (2008)
Phosphorous clustering in germanium-rich silicon germanium
A. Chroneos et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2008)
Nonlinear stability of E centers in Si1-xGex: Electronic structure calculations
A. Chroneos et al.
PHYSICAL REVIEW B (2008)
Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes
A. Chroneos et al.
PHYSICAL REVIEW B (2008)
Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results
S. Brotzmann et al.
PHYSICAL REVIEW B (2008)
Vacancy-arsenic clusters in germanium
A. Chroneos et al.
APPLIED PHYSICS LETTERS (2007)
Carbon, dopant, and vacancy interactions in germanium
A. Chroneos et al.
JOURNAL OF APPLIED PHYSICS (2007)
Accommodation of non-stoichiometry in TiN1-x and ZrN1-x
Nicholas J. Ashley et al.
JOURNAL OF MATERIALS SCIENCE (2007)
Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals: evidence of implant damage enhanced diffusivities
M. S. Carroll et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2007)
Implantation and diffusion of phosphorous in germanium
A. Chroneos et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2006)
Diffusion, activation, and regrowth behavior of high dose P implants in Ge
A Satta et al.
APPLIED PHYSICS LETTERS (2006)
P implantation doping of Ge: Diffusion, activation, and recrystallization
A Satta et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2006)
HfO2 high-κ gate dielectrics on Ge(100) by atomic oxygen beam deposition -: art. no. 032908
A Dimoulas et al.
APPLIED PHYSICS LETTERS (2005)
Thermal desorption of Ge native oxides and the loss of Ge from the surface
J Oh et al.
JOURNAL OF ELECTRONIC MATERIALS (2004)
First-principles simulation: ideas, illustrations and the CASTEP code
MD Segall et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)