Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3086664
Keywords
diffusion; elemental semiconductors; germanium; phosphorus; silicon compounds; vacancies (crystal)
Categories
Ask authors/readers for more resources
Recent experimental studies demonstrate a significant germanium (Ge) substrate loss and consequently dopant loss even during low temperature annealing. Additionally, for phosphorous (P) implanted Ge the capping layer material affects P diffusion. Silicon nitride (Si(3)N(4)) capping is more efficient compared to silicon dioxide (SiO(2)) capping, but an accumulation of P is observed at the Ge/Si(3)N(4) interface. In the present study, the recent experimental evidence is evaluated and with the use of electronic structure simulations the formation of relevant defects is investigated. It is predicted that the formation of clusters containing nitrogen (N) and vacancies (V) can be related to the observed accumulation of P atoms near the Ge/Si(3)N(4) interface.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available