Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3224900
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- Deutsche Forschungsgemeinschaft [BR 1520/6-2]
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Electronic structure calculations are used to investigate the stability of fluorine-vacancy (F(n)V(m)) clusters in germanium (Ge). Using mass action analysis, it is predicted that the F(n)V(m) clusters can remediate the concentration of free V considerably. Importantly, we find that F and P codoping leads to a reduction in the concentration of donor-vacancy (DV) pairs. These pairs are responsible for the atomic transport and the formation of D(n)V clusters that lead to a deactivation of donor atoms. The predictions are technologically significant as they point toward an approach by which V-mediated donor diffusion and the formation of inactive D(n)V clusters can be suppressed. This would result in shallow and fully electrically active n-type doped regions in Ge-based electronic devices. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3224900]
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