Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3273327
Keywords
acoustic wave velocity; aluminium compounds; diamond; finite element analysis; III-V semiconductors; interdigital transducers; semiconductor thin films; semiconductor-insulator boundaries; surface acoustic wave transducers; titanium; wide band gap semiconductors
Categories
Funding
- National Science Council of Taiwan [NSC 98-2221-E-002-195, NSC 98-2221-E-214-019]
Ask authors/readers for more resources
The interdigital transducer (IDT)/AlN/conducting layer/diamond structures are investigated in this study to design surface acoustic wave (SAW) devices in the super high frequency band. Simulation results using the finite element method show that a thin conducting layer can effectively increase the coupling coefficient and, thus, broaden the bandwidth of SAW devices. For the Sezawa mode, it is illustrated that using a Ti layer with a layer thickness-to-wavelength ratio of 0.02 the maximum coupling coefficient is 2.546% and the associated SAW phase velocity is 10657 m/s at the AlN films' thickness-to-wavelength ratio of 0.14. This coupling coefficient is 105% higher than that in the IDT/AlN/diamond structure. The research results can be applied to design SAW devices using diamond based structures in the super high frequency band.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
