Threading dislocation evolution in patterned GaN nanocolumn growth and coalescence overgrowth

Threading dislocation (TD) evolution during patterned GaN nanocolumn (NC) growth and coalescence overgrowth with metal-organic chemical vapor deposition is studied based on the comparisons of NC and coalescence overgrowth samples of different NC cross-section diameters and spacing sizes. From the measurement results of depth-dependent x-ray diffraction and cross-section transmission electron microscopy, it is found that the TD density in an NC depends on the patterned hole size for NC growth. Also, the TD formation at the beginning of coalescence overgrowth is related to the NC spacing size. Although the TD density at the bottom of the overgrown layer is weakly dependent on NC and spacing sizes, at its top surface, the TD density strongly relies on NC size. Among the overgrowth samples of different NC diameters and spacing sizes with a fixed NC diameter/spacing ratio, the one with the smallest size and spacing leads to the lowest TD density, the largest lateral domain size, and the highest photoluminescence efficiency. Also, the optical and crystal qualities at the surfaces of all the overgrowth samples are superior to those of a GaN template. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3176984]