Effect of Mn doping on electric and magnetic properties of BiFeO3 thin films by chemical solution deposition

The effect of Mn doping on crystal structure, electric and magnetic properties of BiFeO3 thin films prepared via a chemical deposition method on (111) Pt/Ti/SiO2/Si substrates was studied. The substitution of Fe ions by a small amount (5%) of Mn ions could facilitate the stabilization of Fe3+ in BiFeO3 thin films, while larger substitution (e. g., 10% and 15% Mn substitution ) could lead to the increase in Fe2+ concentration. Well saturated polarization hysteresis loops were observed in the Mn-doped BiFeO3 films, with remanent polarization value of 32 mu C/cm(2) and 53 mu C/cm(2) for the 5% and 10% Mn-doped BiFeO3 films, respectively. Mn substitution also affect ferroelectric domain structures and microstructures of the films. It was observed that Mn substitution does not affect the intrinsic weak magnetism of BiFeO3. The enhanced ferroelectric and weak magnetic behaviors by Mn substitution were further studied through the analysis of the bonding state of Fe and Mn ions. (C) 2009 American Institute of Physics. (doi: 10.1063/1.3225559)