Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3267875
Keywords
doping profiles; energy gap; excitons; II-VI semiconductors; impurities; ionisation; magnesium compounds; photoluminescence; semiconductor doping; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds
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Funding
- Deutsche Forschungsgemeinschaft [SFB 762]
- European Social Fund (ESF)
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The photoluminescence from semiconductor alloys is inhomogeneously broadened due to alloy disorder. We present a model to explain the so-called S-shape temperature dependence of peak position, taking into account recombination of free excitons and excitons bound to impurities. We find the following effects to contribute with increasing temperature: exciton localization on impurities at low temperatures, exciton transfer between impurities, exciton ionization from impurities, transfer of excitons between potential minima in the disorder potential, and shrinkage of band gap. We extend the common theory of ionization of excitons from impurities to take into account impurity ionization. We find this effect essential for our lineshape theory. The lineshape theory describes quantitatively the temperature dependent peak position in MgxZn1-xO alloys.
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