Mn incorporation induced changes on structure and properties of N-doped ZnO

The influences of Mn doping on the electrical and optical properties of the Zn1-xMnxO:N films have been investigated. Mn incorporation occupying on the Zn site has led the lattice constants and the bandgap of the films increased with the structural quality deteriorated. The electrical properties have been found to change significantly with the content of Mn in the films, due to the changes in the amount of the N-O acceptors and CN compensation centers formed in the films by Mn incorporation as revealed by x-ray photoelectron spectrometry measurements. The chemical states of Mn have been identified as Mn2+ and Mn4+, corresponding to Mn occupying on the Zn site and MnO2 second phase, respectively. The conductive type and the Mn2+ content of the films show a strong effect on the magnetic properties, which can be explained from the theoretical predication on the Mn 3d and N 2p ferromagnetic (hole) coupling on the ferromagnetism. However, uncompensated spins from nonuniform distribution of Mn atoms in ZnO may also be responsible for the observation of ferromagnetism signature at least on the high resistant samples.