Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3266165
Keywords
energy gap; exchange interactions (electron); ferromagnetic materials; II-VI semiconductors; lattice constants; magnetic thin films; manganese; nitrogen; semiconductor doping; semiconductor thin films; semimagnetic semiconductors; wide band gap semiconductors; X-ray photoelectron spectra; zinc compounds
Categories
Funding
- State Key Program for Basic Research of China [2006CB921803]
- Project of High Technology Research & Development of China [2007AA03Z404]
- National Natural Science Foundation of China [60776013, 60990312, 50532100]
- National Science Foundation of Jiangsu Province of China [BK2007118]
- Doctoral Program of Higher Education of China [20070286037]
- Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu Province of China [1107020070]
Ask authors/readers for more resources
The influences of Mn doping on the electrical and optical properties of the Zn1-xMnxO:N films have been investigated. Mn incorporation occupying on the Zn site has led the lattice constants and the bandgap of the films increased with the structural quality deteriorated. The electrical properties have been found to change significantly with the content of Mn in the films, due to the changes in the amount of the N-O acceptors and CN compensation centers formed in the films by Mn incorporation as revealed by x-ray photoelectron spectrometry measurements. The chemical states of Mn have been identified as Mn2+ and Mn4+, corresponding to Mn occupying on the Zn site and MnO2 second phase, respectively. The conductive type and the Mn2+ content of the films show a strong effect on the magnetic properties, which can be explained from the theoretical predication on the Mn 3d and N 2p ferromagnetic (hole) coupling on the ferromagnetism. However, uncompensated spins from nonuniform distribution of Mn atoms in ZnO may also be responsible for the observation of ferromagnetism signature at least on the high resistant samples.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available