Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3168436
Keywords
-
Categories
Funding
- Academy of Finland [119260]
- Academy of Finland (AKA) [119260, 119260] Funding Source: Academy of Finland (AKA)
Ask authors/readers for more resources
After irradiation with 7 and 9 MeV protons, activation-induced effects were encountered in measurements of current-voltage (IV) and capacitance-voltage (CV) characteristics for Czochralski and float-zone grown silicon particle detectors prepared on printed circuit boards with copper electrodes. With the present detector construction, the Si-30(p, n)P-30 and Cu-63(p, n)Zn-63 reactions induce dominant interference in such measurements. The daughter nuclides are positron emitters with half-lives of 2.5 and 38.5 min, respectively, and the slowing down of the emitted positrons generates a significantly large concentration of electron-hole pairs in the detector volume increasing the leakage current level and decreasing the breakdown voltage. The observed time-dependent characteristics were verified by modeling the activation of the detector structure and the resulting leakage current. As a result, the electrical measurements cannot be performed immediately after irradiation due to silicon activation, and, generally, materials becoming easily activated should be avoided in the detector concept. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3168436]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available