Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3110075
Keywords
gallium compounds; III-V semiconductors; photocathodes; photoemission; wide band gap semiconductors
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Funding
- NSF [PHY0131508]
- NSF/NIH-NIGMS [DMR0225180]
- DOE [DE-FG02-06ER84506]
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We present the measurements of thermal emittance and response time for a GaN photocathode illuminated with 5 ps pulses at 260 nm wavelength. The thermal emittance was measured downstream of a 100 kV dc gun using a solenoid scan with a wire scanner and a beam viewscreen and was found to be 1.35 +/- 0.11 mm mrad normalized rms emittance per 1 mm rms of illuminated spot size. The response time of the photoemitted electrons was evaluated using a deflecting mode rf cavity synchronized to the laser pulses and was found to be prompt within the time resolution capability of our setup.
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