Thermal emittance and response time measurements of a GaN photocathode

We present the measurements of thermal emittance and response time for a GaN photocathode illuminated with 5 ps pulses at 260 nm wavelength. The thermal emittance was measured downstream of a 100 kV dc gun using a solenoid scan with a wire scanner and a beam viewscreen and was found to be 1.35 +/- 0.11 mm mrad normalized rms emittance per 1 mm rms of illuminated spot size. The response time of the photoemitted electrons was evaluated using a deflecting mode rf cavity synchronized to the laser pulses and was found to be prompt within the time resolution capability of our setup.