Related references
Note: Only part of the references are listed.Effects of donor doping on Ga1-xMnxAs
Y. J. Cho et al.
APPLIED PHYSICS LETTERS (2008)
Composition dependence of the hole mobility in GaSbxAs1-x
K. Alberi et al.
APPLIED PHYSICS LETTERS (2008)
Band anticrossing in highly mismatched SnxGe1-x semiconducting alloys
K. Alberi et al.
PHYSICAL REVIEW B (2008)
Valence band anticrossing in GaBixAs1-x
K. Alberi et al.
APPLIED PHYSICS LETTERS (2007)
Valence-band anticrossing in mismatched III-V semiconductor alloys
K. Alberi et al.
PHYSICAL REVIEW B (2007)
Momentum selectivity and anisotropy effects in the nitrogen K-edge resonant inelastic x-ray scattering from GaN -: art. no. 085221
VN Strocov et al.
PHYSICAL REVIEW B (2005)
Blue luminescence from amorphous GaN films deposited by pulsed-laser ablation at room temperature
SH Shim et al.
THIN SOLID FILMS (2005)
Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy
A Kimura et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Epitaxial GaN1-yAsy layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy
A Kimura et al.
APPLIED PHYSICS LETTERS (2004)
Filled and empty states of disordered GaN studied by x-ray absorption and emission
BJ Ruck et al.
JOURNAL OF APPLIED PHYSICS (2004)
Valence band hybridization in N-rich GaN1-xAsx alloys -: art. no. 115214
J Wu et al.
PHYSICAL REVIEW B (2004)
Ferromagnetic Ga1-xMnxAs produced by ion implantation and pulsed-laser melting
MA Scarpulla et al.
APPLIED PHYSICS LETTERS (2003)
Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1-x formed by N ion implantation
KM Yu et al.
APPLIED PHYSICS LETTERS (2002)
The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy
CT Foxon et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Ion implantation into GaN
SO Kucheyev et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)
Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries
W Walukiewicz et al.
PHYSICAL REVIEW LETTERS (2000)