Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3211293
Keywords
electrical resistivity; ion beam lithography; platinum; pulsed laser deposition; random-access storage; sandwich structures; scanning electron microscopy; silver; silver compounds; solid electrolytes; surface morphology; thin films; X-ray chemical analysis; X-ray diffraction
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Funding
- State Key Program for Basic Research of China [2007CB935401, 2006CB921803]
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Resistive switching memory cells with polycrystalline (AgI)(0.2)(Ag2MoO4)(0.8) (AIMO) solid electrolyte films as storage medium were fabricated on SiO2/Pt/Ti/Si substrates by using pulse laser deposition technique and focused ion beam lithography. X-ray diffraction, scanning electron microscopy, and energy dispersive x-ray analysis have been employed to investigate the structure, the surface morphology, and the composition of AIMO thin films. The Ag/AIMO/Pt memory cells with sandwich structure exhibit stable, reproducible, and reliable resistive switching characteristics. The ratio of resistance between high resistance states and low resistance states can reach similar to 10(5). Moreover, the low resistance is similar to 500 at a compliance current of 0.5 mA, which is favorable to reduce the power dissipation of the entire circuit. The switching-on mechanism has been discussed and the metallic conduction characteristic has also been verified. The fast response speed and the good retention properties further indicate that polycrystalline AIMO thin film is a potential candidate for the next generation nonvolatile memory.
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