Related references
Note: Only part of the references are listed.Competition between damage buildup and dynamic annealing in ion implantation into Ge
M. Posselt et al.
APPLIED PHYSICS LETTERS (2006)
Sputtering mechanisms near the threshold energy
W Eckstein et al.
JOURNAL OF NUCLEAR MATERIALS (2004)
Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga+ irradiation
A Lugstein et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2003)
FIB processing of silicon in the nanoscale regime
A Lugstein et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2003)
Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots
A Lugstein et al.
JOURNAL OF APPLIED PHYSICS (2002)
Crystalline-to-amorphous phase transformation in ion-irradiated GaAs
RA Brown et al.
PHYSICAL REVIEW B (2001)
Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining
C Lehrer et al.
MICROELECTRONIC ENGINEERING (2001)
A 2 kHz-100 MHz dynamic amplifier for tracking targets of variable amplitude
MK Jain et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2001)
Investigation of the structure of damage layers in TEM samples prepared using a focused ion beam
S Rubanov et al.
JOURNAL OF MATERIALS SCIENCE LETTERS (2001)
Ion beam induced epitaxy experiments in silicon under channeling and random alignments
JS Williams et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2000)
Share Paper
