Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3039509
Keywords
absorption coefficients; aluminium compounds; channelling; conduction bands; energy gap; III-V semiconductors; indium compounds; Rutherford backscattering; semiconductor thin films; wide band gap semiconductors
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Funding
- U.S. Department of Energy [DE-AC02-05CH11231]
- National Defense Science and Engineering Graduate Fellowship
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We report a band gap bowing parameter for In1-xAlxN of 4.7 eV from a study of high quality and homogenous samples with x=0.017-0.60. Optical absorption data were modeled to extract the band gaps in order to consider the complications of the band structure of In-rich InAlN, including the Burstein-Moss shift, nonparabolic conduction band, and broadening of the absorption edge. The alloy compositions were accurately determined using Rutherford backscattering spectrometry and the sample quality was evaluated using x-ray diffraction and channeling-RBS.
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