Related references
Note: Only part of the references are listed.Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric
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Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks
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Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd2O3 films on Ge(001) substrates
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Fabrication of GeO2 layers using a divalent Ge precursor
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Improved Ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack
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Hafnium oxide gate dielectrics on sulfur-passivated germanium
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In situ chemical and structural investigations of the oxidation of Ge(001) substrates by atomic oxygen
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Nanoscale germanium MOS dielectrics - Part I: Germanium oxynitrides
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Nanoscale germanium MOS dielectrics -: Part II:: High-κ gate dielectrics
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New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development
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Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators
VV Afanas'ev et al.
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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
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Intrinsic carrier effects in HfO2-Ge metal-insulator-semiconductor capacitors -: art. no. 223507
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HfO2 high-κ gate dielectrics on Ge(100) by atomic oxygen beam deposition -: art. no. 032908
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Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks
G Apostolopoulos et al.
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Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics
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Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 Å
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