Journal
JOURNAL OF APPLIED PHYSICS
Volume 103, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2940732
Keywords
-
Categories
Ask authors/readers for more resources
We report steady-state and time-resolved photoluminescence (TRPL) measurements on individual GaN nanowires (6-20 mu m in length, 30-940 nm in diameter) grown by a nitrogen-plasma-assisted, catalyst-free molecular-beam epitaxy on Si(111) and dispersed onto fused quartz substrates. Induced tensile strain for nanowires bonded to fused silica and compressive strain for nanowires coated with atomic-layer-deposition alumina led to redshifts and blueshifts of the dominant steady-state PL emission peak, respectively. Unperturbed nanowires exhibited spectra associated with high-quality, strain-free material. The TRPL lifetimes, which were similar for both relaxed and strained nanowires of similar size, ranged from 200 ps to over 2 ns, compared well with those of low-defect bulk GaN, and depended linearly on nanowire diameter. The diameter-dependent lifetimes yielded a room-temperature surface recombination velocity S of 9x10(3) cm/s for our silicon-doped GaN nanowires.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available