Integrated on-chip inductors using magnetic material (invited)

On-chip inductors with magnetic material are integrated into both advanced 130 and 90 nm complementary metal-oxide semiconductor processes. The inductors use aluminum or copper metallization and amorphous CoZrTa magnetic material. Increases in inductance of up to 28 times corresponding to inductance densities of up to 1.3 mu H/mm(2) were obtained, significantly greater than prior values for on-chip inductors. With such improvements, the effects of eddy currents, skin effect, and proximity effect become clearly visible at higher frequencies. The CoZrTa was chosen for its good combination of high permeability, good high-temperature stability (>250 degrees C), high saturation magnetization, low magnetostriction, high resistivity, minimal hysteretic loss, and compatibility with silicon technology. The CoZrTa alloy can operate at frequencies up to 9.8 GHz, but trade-offs exist between frequency, inductance, and quality factor. The effects of increasing the magnetic thickness on the permeability spectra were measured and modeled. The inductors use magnetic vias and elongated structures to take advantage of the uniaxial magnetic anisotropy. Techniques are presented to extract a sheet inductance and examine the effects of magnetic vias on the inductors. The inductors with thick copper and thicker magnetic films have resistances as low as 0.04 Omega, and quality factors up to 8 at frequencies as low as 40 MHz. (C) 2008 American Institute of Physics.