IV-VI diluted magnetic semiconductor Ge1-xMnxTe epilayer grown by molecular beam epitaxy

Growth of the IV-VI diluted magnetic semiconductor Ge1-xMnxTe by molecular beam epitaxy is reported. The epitaxial growth of Ge1-xMnxTe (x=0.13) on BaF2 (111) with a GeTe buffer layer is confirmed by x-ray diffraction and reflection high-energy electron diffraction. The ferromagnetic order is clearly established by the magnetization and magnetotransport measurements. The Curie temperature of 100 K is obtained for the hole concentration of 7.86x10(20) cm(-3). The existence of the strong p-d exchange which gives rise to the ferromagnetic order is revealed by the hard x-ray photoemission measurements. (c) 2008 American Institute of Physics.