Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3021148
Keywords
aluminium compounds; gallium compounds; III-V semiconductors; refractive index; wide band gap semiconductors
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Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan [C09]
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The temperature dependence of the refractive indices of GaN and AlN was investigated in the wavelength range from the near band edge (367 nm for GaN and 217 nm for AlN) to 1000 nm and the temperature range from room temperature to 515 degrees C. Optical interference measurements with vertical incident configuration were employed to precisely evaluate the ordinary refractive indices.
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