Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2969718
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The effect of Mg doping in ZnO is investigated through structural, electrical, and optical properties. Zn1-xMgxO (0 < x < 0.3) thin films were deposited on Si (100) and coming glass substrates using multimagnetron sputtering. Investigations on the structural properties of the films revealed that the increase in Mg concentration resulted in phase evolution from hexagonal to cubic phase. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 degrees C. The Zn0.7Mg0.3O thin films exhibited a well-defined polarization hysteresis loop with a remnant polarization of 0.2 mu C/cm(2) and coercive field of 8 kV/cm at room temperature. An increase in the band gap with an increase in Mg content was observed in the range of 3.3-3.8 eV for x=0-0.3. The average transmittance of the films was higher than 90% in the wavelength region lambda=400-900 nm. (C) 2008 American Institute of Physics.
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