Related references
Note: Only part of the references are listed.Broadening factors of E1(LO) phonon-plasmon coupled modes of hexagonal InN investigated by infrared reflectance measurements
Yoshihiro Ishitani et al.
PHYSICAL REVIEW B (2007)
Monte Carlo calculation of two-dimensional electron gas mobility in InN-based heterostructures
V. M. Polyakov et al.
JOURNAL OF APPLIED PHYSICS (2007)
Photon-assisted electron transport in graphene: Scattering theory analysis
B. Trauzettel et al.
PHYSICAL REVIEW B (2007)
Effect of dislocations on electrical and electron transport properties of InN thin films.: II.: Density and mobility of the carriers
V. Lebedev et al.
JOURNAL OF APPLIED PHYSICS (2006)
Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
G. Koblmuller et al.
APPLIED PHYSICS LETTERS (2006)
Step-flow growth of In-polar InN by molecular beam epitaxy
Xinqiang Wang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)
Origin of the n-type conductivity of InN:: The role of positively charged dislocations
L. F. J. Piper et al.
APPLIED PHYSICS LETTERS (2006)
Fermi-level stabilization energy in group III nitrides
SX Li et al.
PHYSICAL REVIEW B (2005)
Intrinsic electron accumulation at clean InN surfaces
I Mahboob et al.
PHYSICAL REVIEW LETTERS (2004)
Anisotropy of the dielectric function for wurtzite InN
R Goldhahn et al.
SUPERLATTICES AND MICROSTRUCTURES (2004)
Effective mass of InN epilayers
SP Fu et al.
APPLIED PHYSICS LETTERS (2004)
Temperature dependence of the fundamental band gap of InN
J Wu et al.
JOURNAL OF APPLIED PHYSICS (2003)
On the band gap of indium nitride
BR Nag
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2003)
Surface charge accumulation of InN films grown by molecular-beam epitaxy
H Lu et al.
APPLIED PHYSICS LETTERS (2003)
Effects of the narrow band gap on the properties of InN
J Wu et al.
PHYSICAL REVIEW B (2002)
Effective electron mass and phonon modes in n-type hexagonal InN -: art. no. 115206
A Kasic et al.
PHYSICAL REVIEW B (2002)
Physical properties of InN with the band gap energy of 1.1eV
T Inushima et al.
JOURNAL OF CRYSTAL GROWTH (2001)
Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry
A Kasic et al.
PHYSICAL REVIEW B (2000)
Infrared dielectric anisotropy and phonon modes of sapphire
M Schubert et al.
PHYSICAL REVIEW B (2000)