Related references
Note: Only part of the references are listed.Bowing of the band gap pressure coefficient in InxGa1-xN alloys
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Band dispersion relations of zinc-blende and wurtzite InN
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Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
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Anisotropy of the dielectric function for wurtzite InN
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Effective mass of InN epilayers
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Origin of electron accumulation at wurtzite InN surfaces -: art. no. 201307
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Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys
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Optical properties of Si-doped InN grown on sapphire (0001)
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Temperature dependence of the fundamental band gap of InN
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Band gaps of InN and group III nitride alloys
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Breakdown of the band-gap-common-cation rule: The origin of the small band gap of InN
SH Wei et al.
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Surface charge accumulation of InN films grown by molecular-beam epitaxy
H Lu et al.
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69,71Ga NMR spectra and relaxation in wurtzite GaN -: art. no. 064416
M Corti et al.
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Do we know the fundamental energy gap of InN?
F Bechstedt et al.
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Effects of the narrow band gap on the properties of InN
J Wu et al.
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Optical bandgap energy of wurtzite InN
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Small band gap bowing in In1-xGaxN alloys
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Unusual properties of the fundamental band gap of InN
J Wu et al.
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Effective electron mass and phonon modes in n-type hexagonal InN -: art. no. 115206
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Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures -: art. no. 115319
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High-pressure phases of the light alkali metals
NE Christensen et al.
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Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures
J Serrano et al.
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Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy
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