Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 9, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3006133
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Funding
- ST Microelectronics Catania
- Italian Minister for Research [RBIP068LNE_ 001]
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In this work, the electrical properties of Ni/GaN Schottky contacts formed on high-temperature annealed (1100-1200 degrees C) GaN surfaces were studied. Although the morphology of the GaN surface was not changing after annealing, a worsening of the electrical behavior of the Schottky contact occurred, with a reduction in the barrier height and an increase in the leakage current. Moreover, a different temperature dependence of the reverse electrical characteristics of the Schottky diodes was observed. In particular, for the sample annealed at 1150 degrees C for 5 min, one-dimensional variable-range-hopping conduction was one of the dominant carrier transport mechanisms. The presence of a high density of interface states was indicated as a possible reason of this electrical behavior. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3006133]
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