4.6 Article

Field-dependant hopping conduction in silicon nanocrystal films

Journal

JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 12, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3050332

Keywords

elemental semiconductors; hopping conduction; nanostructured materials; percolation; semiconductor thin films; silicon

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We investigate the electric field dependence of hopping conduction in 300 nm thick films of similar to 8 nm diameter silicon nanocrystals. The hopping conductivity sigma follows a ln(sigma)proportional to 1/T-1/2 dependence with temperature T, explained by a percolation hopping conduction model. At high fields F>similar to 1x10(5) V/cm, the hopping conductivity follows a ln(sigma)proportional to F-1/2 dependence. This dependence is investigated using the concept of effective temperature, introduced originally by Shklovskii for hopping conduction in disordered materials.

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