Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3042242
Keywords
amorphous semiconductors; Fourier transform spectra; infrared spectra; plasma CVD; semiconductor growth; semiconductor thin films; silicon compounds; wide band gap semiconductors
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Funding
- ICTP TRIL program
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Hydrogenated amorphous silicon carbon alloy films of different carbon compositions were prepared by plasma enhanced chemical vapor deposition system using silane and methane with helium dilution and were characterized by structural and optical techniques to understand the microstructural and overall disorder in amorphous semiconductors. The study demonstrates that the increase of the microstructural disorder results in an increase in the overall disorder and the local defect density induced by carbon incorporation seems to dominate the overall defect structure of the network.
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