Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3041652
Keywords
annealing; II-VI semiconductors; ion implantation; photoluminescence; semiconductor thin films; vanadium; visible spectra; wide band gap semiconductors; zinc compounds
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Funding
- BMBF [03N8708]
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Pulsed laser deposited ZnO films were implanted with vanadium ions using ion energies between 30 and 250 keV with different fluences yielding vanadium concentrations in the range between 0.8 and 5 at. %. After annealing under oxygen ambient at 800 degrees C, a broad luminescence band observed by photoluminescence covers nearly the total visible spectral region. This luminescence is a superposition of different bands triggered by the incorporated V and remaining implantation defects. The visual impression of the bright whitish emission of the implanted ZnO has been quantified using the color space map of the Commission internationale de l'Eclairage. Furthermore, the intensity of the white emission strongly increases with increasing V concentration, whereas Ar-implanted reference sample shows only weak white emission.
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