Journal
NANOTECHNOLOGY
Volume 26, Issue 47, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/26/47/475202
Keywords
graphene; transistor; contact; niobium; transfer characteristic; doping; conductivity
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We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.
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