4.6 Article

Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid

Journal

NANOTECHNOLOGY
Volume 26, Issue 6, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/26/6/065702

Keywords

InGaN; quantum dot; single photon emitter; site controlled; micropyramid; biexciton; screening layer

Funding

  1. Carl Trygger Foundation for Scientific Research
  2. Swedish Research Council (VR)
  3. Nano-N consortium - Swedish Foundation for Strategic Research (SSF)
  4. Knut and Alice Wallenberg Foundation
  5. Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]
  6. Font-D at Linkoping University

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We report on excitonic single photon emission and biexcitonic photon bunching from an InGaN quantum dot formed on the apex of a hexagonal GaN micropyramid. An approach to suppress uncorrelated emission from the pyramid base is proposed, a metal film is demonstrated to effectively screen background emission and thereby significantly enhance the signal-to-background ratio of the quantum dot emission. As a result, the second order coherence function at zero time delay g((2))(0) is significantly reduced (to g((2))(0) = 0.24, raw value) for the excitonic autocorrelation at a temperature of 12 K under continuous wave excitation, and a dominating single photon emission is demonstrated to survive up to 50 K. The deterioration of the g((2))(0) -value at elevated temperatures is well understood as the combined effect of reduced signal-to-background ratio and limited time resolution of the setup. This result underlines the great potential of site-controlled pyramidal dots as sources of fast polarized single photons.

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