Journal
NANOTECHNOLOGY
Volume 26, Issue 50, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/26/50/502501
Keywords
quantum dots; silicon nanoelectronics; tunability
Funding
- Australian Research Council [CE11001027, DP150101863]
- US Army Research Office [W911NF-08-1-0527]
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Quantum dots in semiconductor heterostructures provide one of the most flexible platforms for the study of quantum phenomena at the nanoscale. The surging interest in using quantum dots for quantum computation is forcing researchers to rethink fabrication and operation methods, to obtain highly tunable dots in spin-free host materials, such as silicon. Borselli and colleagues report in Nanotechnology the fabrication of a novel Si/SiGe double quantum dot device, which combines an ultra-low disorder Si/SiGe accumulation-mode heterostructure with a stack of overlapping control gates, ensuring tight confining potentials and exquisite tunability. This work signals the technological maturity of silicon quantum dots, and their readiness to be applied to challenging projects in quantum information science.
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