Journal
NANOTECHNOLOGY
Volume 26, Issue 21, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/26/21/215202
Keywords
field effect mobility; adsorption; nanowire transistor; nanowire FET; nanofabrication
Funding
- Dutch Organisation for Scientific Research (NWO)
- Foundation for Fundamental Research on Matter (FOM)
- European Union [265073]
- Microsoft Corporation Station Q
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We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 K by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of similar to 2.5 x 10(4) cm(2) V-1 s(-1). We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.
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