Journal
NANOTECHNOLOGY
Volume 26, Issue 25, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/26/25/255601
Keywords
III-V semiconductors; substrate orientation; structural quality
Funding
- Australian Research Council
- National Basic Research Program of China [2011CB925604]
- National Science Foundation of China [61376015, 91321311, 11334008, 91121009]
- Shanghai Science and Technology Foundation [13JC1405901]
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In this study, the effect of substrate orientation on the structural quality of Au-catalyzed epitaxial GaAs nanowires grown by a molecular beam epitaxy reactor has been investigated. It was found that the substrate orientations can be used to manipulate the nanowire catalyst composition and the catalyst surface energy and, therefore, to alter the structural quality of GaAs nanowires grown on different substrates. Defect-free wurtzite-structured GaAs nanowires grown on the GaAs (110) substrate have been achieved under our growth conditions.
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