Journal
NANOSCALE
Volume 7, Issue 25, Pages 11063-11074Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr06417h
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Funding
- National Natural Science Foundation of China [61274113, 11204212]
- Program for New Century Excellent Talents in University [NCET-11-1064]
- Tianjin Natural Science Foundation [10SYSYJC27700, 10ZCKFGX01200, 13JCYBJC15700, 13JCZDJC26100, 14JCQNJC00800, 14JCZDJC31500]
- Tianjin Science and Technology Developmental Funds of Universities and Colleges [20100703, 20130701, 20130702]
- Program for Tianjin Innovative Research Team in University
- Global Research Laboratory Program through a National Research Foundation of Korea (NRF) - Ministry of Education, Science, and Technology of the Republic of Korea [2012040157]
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Electronic bipolar resistance switching (eBRS) in an Al/TiOx/Al structure, where the TiOx layer was reactively sputter-deposited, was examined in conjunction with a structural analysis using transmission electron microscopy. A thin (3-5 nm) insulating Al(Ti)O-x layer was formed at the bottom Al electrode interface, which provided the necessary asymmetric potential barrier for the eBRS to emerge, whereas the top Al electrode interface appeared to have provided the fluent carrier (electron) injection. The set and reset switching were related to the trapping and detrapping of the carriers at the trap centers, the characteristic energy of which was similar to 0.86 eV, across the entire electrode area. The general features of this material system as the feasible RS memory were insufficient: endurance cycle,
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