Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 768, Issue -, Pages 800-809Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2018.07.224
Keywords
ZnO thin films; RF sputtering; Plasma immersion ion implantation; Phosphorus; Free-to-bound emission
Categories
Funding
- Department of Science and Technology, India
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To study the effects of implantation on ZnO thin films grown on Si substrates, we have subjected it to phosphorous ion implantation for 10, 40, and 70 s through plasma immersion ion implantation and rapid thermal annealing. Low-temperature photoluminescence spectra of the as-implanted samples exhibited a reduction in the donor-bound exciton peak at 3.36 eV with implantation time. The photoluminescence spectrum of the 70 s implanted 1000 degrees C-annealed sample confirmed acceptor-type doping. X-ray diffraction measurements showed a reduction in the c-axis length along the <002> direction with implantation time, evidencing phosphorous-ion incorporation in the implanted films, which was further confirmed by the blue shifting of the E2 high peak in the Raman spectra. XPS measurements affirmed the presence of the P 2p peak, a signature of P-O bond, and confirmed the substitution of Zn atoms by P atoms and the subsequent formation of the Pzn-2Vzn complex essential for acceptor-type conductivity. (C) 2018 Elsevier B.V. All rights reserved.
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