Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 610, Issue -, Pages 113-117Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2014.04.213
Keywords
Semiconductors; Sol-gel processes; Electronic band structure; Photoelectron spectroscopies
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Funding
- UGC-DAE CSR, Indore [CSR-I/CRS-64/2012-13/272]
- CSIR, New Delhi [9/151 (0033)/2012-EMR-I]
- DST, New Delhi [SR/FPT/PS-138/2010]
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We report, the studies on the electronic structure and valence band modifications in sol-gel grown Zn1-xCoxO (x = 0, 0.5 and 0.15) samples, obtained using X-ray photoelectron spectroscopy (XPS) measurements. Structural studies confirm the single phasic hexagonal wurtzite structure having space group P6(3)mc. XPS measurements of Co 2p core level indicate that, Co-ions are in +2 state in ZnO. Using valence band spectroscopy (VBS) and resonant photoemission spectroscopy (RPES) measurements, modifications in the electronic structure of Co-doped ZnO have been understood in the context of increment in the occupation of Co-3d states with Co-content which extends the VB maxima edge. (C) 2014 Elsevier B.V. All rights reserved.
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