Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 616, Issue -, Pages 436-441Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2014.07.058
Keywords
Cu2ZnSn(S,Se)(4); CZTSe; ZnSe; Sn loss
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Funding
- Global Leading Technology Program of the Office of Strategic R&D Planning (OSP) [2011T100100038]
- Human Resources Development of Korea Institute of Energy Technology Evaluation and Planning (KETEP) [20104010100580]
- World-Class 300 Project R&D Program - Korea government Ministry of Trade, Industry and Energy
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An elemental stacked Mo/Sn/Cu/Zn/Se precursor was prepared by sputtering pure elemental targets of Sn, Cu, and Zn sequentially onto Mo-coated glass substrates, followed by thermal evaporation of Se. To compensate for typical Sn loss observed during the thermal annealing of precursors in a tube-type rapid thermal annealing reactor, a custom-designed quartz/Se/Sn cover was added to the sample tray. It was found that Sn was supplied in the form of a binary compound, SnSex, and thus, the delamination of Cu2ZnSnSe4 (CZTSe) from the Mo layer was well suppressed. It was also found that an increase in the Se layer thickness (1, 3, and 5 mu m) in the precursor structure could result in more severe delamination of CZTSe from the Mo layer and an increase in the Sn thickness (300-500 nm) in the quartz/Se/Sn cover could lead to the incorporation of more Sn and Se into the CZTSe structure. (C) 2014 Elsevier B.V. All rights reserved.
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