Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 602, Issue -, Pages 42-48Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2014.02.182
Keywords
Thin films; Semiconductors; Nanostructure materials; Surfaces and interfaces; Electronic properties; Photocatalytic activity
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Funding
- University Grants Commission (India) for his fellowship [20-12/2009]
- DST-SERI (India) for project fellowship [DST/TM/SERI/2K10/60]
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The study demonstrates an approach to synthesize nanostructure SnO2 thin films on TCO (transparent conducting oxide) coated glass substrates by galvanic technique. Aqueous solution of hydrated stannic chloride (SnCl4 center dot 5H(2)O) in potassium nitrate (KNO3) solution was used as the working solution. The process involves no sophisticated reactor or toxic chemicals, and proceeds continuously under ambient condition; it provides an economic way of synthesizing nanostructure SnO2 semiconductor thin films. The influence of sintering temperature on crystalline structure, morphology, electrical and dielectric properties has been studied. A detail analysis of I-V, C-V and dielectrics for annealed SnO2 thin films have been carried out. The morphological advantage i.e. nanoporous flake like structure allows more efficient transport of reactant molecules to the active interfaces and results a strong photocatalytic activity for degrading methyl orange (MO) dye. (C) 2014 Elsevier B.V. All rights reserved.
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