Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 593, Issue -, Pages 267-270Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2014.01.093
Keywords
Hydrothermal process; Titanium oxide; Memristors
Ask authors/readers for more resources
Fabrication of memristor device (Ag/TiO2/Al) with TiO2 active layer using hydrothermal process is reported. The structural, surface morphological and optical properties of deposited TiO2 films are characterized using X-ray diffraction (XRD), Raman, Atomic force microscope (AFM) and spectroscopic reflectometer techniques respectively. XRD and AFM studies revealed the presence of nanostructured anatase TiO2 with tetragonal crystal structure. The optical reflectance of the deposited TiO2 films is observed to be 15-22% in the visible region. The bipolar resistive switching behavior within the low operating voltage (+/- 0.68 V) is observed in prepared Ag/TiO2/Al memristor. Our results confirm that the hydrothermal route provides breakthrough elucidation in the electronic memory device fabrication. A possible mechanism for the resistive switching behavior has discussed. (C) 2014 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available