Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 584, Issue -, Pages 269-272Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2013.09.073
Keywords
Vanadium-doped ZnO thin film; Unipolar switching; Bipolar switching
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Funding
- Key Project of National Natural Science Foundation of China (NSFC) [11032010]
- NSFC [51072171, 61274107, 61176093, 11275163]
- PCSIRT [IRT1080]
- 973 Program [2012CB326404]
- Key Project of Hunan Provincial NSFC [13JJ2023]
- Key Project of Scientific Research Fund of Hunan Provincial Education Department [12A129]
- Doctoral Program of Higher Education of China [20104301110001]
- Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
- Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory [ZHD201304]
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The coexistence of bipolar and unipolar resistive switching (BRS and URS) modes are observed in the vanadium doped ZnO polycrystalline thin films fabricated by a sol-gel method. These two switching modes can be activated separately depending on the different compliance current (I-cc) during the first voltage sweeping process: the fabricated device shows reproducible BRS behavior with a low compliance current I-cc = 0.1 mA, while with a high I-cc = 0.01 A, URS behavior was observed after electroforming. The conversion between BRS and URS is reversible. The conducting filament formation/rupture models with electrochemical redox reactions and thermal effects were suggested to explain the BRS and URS behaviors respectively. (C) 2013 Elsevier B. V. All rights reserved.
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