Journal
NANOSCALE
Volume 7, Issue 27, Pages 11531-11535Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr03197d
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Funding
- National Research Foundation (NRF), Prime Minister's Office, Singapore under its NRF Fellowship [NRF2009NRF-RF001-015]
- Competitive Research Programme [NRF-CRP-6-2010-02, NRF-CRP-11-2012-01]
- Campus for Research Excellence and Technological Enterprise (CREATE) Programme - Singapore Peking University Research Centre for a Sustainable Low-Carbon Future
- NTU-A*STAR Silicon Technologies Centre of Excellence [11235100003]
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A series of N-heterocyclic quinoxaline derivatives was successfully synthesized and applied as hole transport layers in quantum dot light-emitting diodes (QLEDs). By inducing sp(2) N-atoms into the quinoxaline backbone, the electron affinity of the obtained material was enhanced, and its optical properties and bandgap became tunable. Quinoxaline based N-heteroacenes show a narrow bandgap, high thermal stability, and aligned film morphology. The resulting N-heteroacene polymer based QLED exhibits superior performance to poly(9-vinylcarbazole) based QLED. This study presents a strategy towards the design of novel N-rich molecules for the fabrication of QLEDs with improved performance.
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