p-Type NiZnO thin films grown by photo-assist metal-organic chemical vapor deposition

NiZnO thin films with different Ni and O contents were grown by photo-assist metal-organic chemical vapor deposition. Electrical characteristics of films including resistances and charge carrier concentrations were analyzed. The intrinsic donor defects in NiZnO films could be effectively compensated by the increasing the Ni and O contents. A p-type NiZnO film with a high hole concentration could be obtained by controlling the Ni and O content of the film. This was further confirmed by analyzing defect levels from photoluminescence measurements. (C) 2013 Elsevier B.V. All rights reserved.